ISOLATED THIN FILM CAPACITORS SWCI-28 14 isolated capacitors 28 pin package FEATURES Integrates capacitor function in one package Design reduces termination noise Standard capacitance values available APPLICATIONS Coupling/Decoupling Power Supply Filtering SHORT PRODUCT APPLICATION NOTE These models incorporate 14 isolated capacitors of equal value. Silicon nitride dielectric, MNOS capacitors exhibit high stability, low temperature coefficients, low leakage <10nA and high BV>50V. SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION Integrated passive networks are manufactured using advanced thin film technologies including ultra -stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. Semiconwell employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1 W/sq to 10,000 W/sq. All Semiconwell's products are available in die form and as KGD, known good die and are ideal for high reliability hybrid and multi chip module applications. Besides thin film resistors, Semiconwell integrates capacitors, Schottky diodes, Zener diodes and transistors. Integrated passive and active networks are manufactured using Semiconwell's in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form, these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space and weight are a concern. CAPACITOR SPECIFICATIONS Breakdown voltage BV>50V Tolerance ±20%, ±10% Power rating 50mW@70°C ELECTRICAL CHARACTERISTICS Capacitance 39pF - 270pF 270pF - 100nF Tolerance ±10, ±20 % Capacitance Voltage Rating (25°C) 50 V GENERAL DIE INFORMATION Substrate SiO2 / Silicon Thickness 10±2 mils Die size xx x yy (mils) Bonding pads 4x4 mils, 3mm thick, 99.99% electroplated gold with a TiW barrier Backside metal Au/Si compatible with eutectic and conductive epoxy die attach. All Semiconwell products are available in die form for chip and wire hybrid circuits and multi chip modules applications. Typical delivery for standard die products is 3-4 weeks ARO. For Chip Scale Packaged (CSP) devices consult factory for an update on availability of certain products. DIELECTRIC The dielectrics are Si3N4/SiO2 100% purity, are thermally grown silicon dioxide SiO2 and LPCVD, PECVD silicon nitride Si3N4 . CAPACITORS Capacitors are available with single or dual dielectrics. Silicon nitride dielectric, MNOS capacitors exhibit high stability, low temperature coefficients, low leakage <10nA and high BV>50V. CONDUCTORS The bonding pads are 3µm thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400°C in air without loss of adhesion.

 
 
SEMICONWELL
Integrated Passive Networks
  ISOLATED THIN FILM CAPACITORS NETWORK
SWCI-28
 
 

FEATURES
APPLICATIONS
SCHEMATIC
Integrates capacitor function in one package
Design reduces termination noise
Standard capacitance values available
 
 
 
Coupling/Decoupling
Filtering
 
 
 
 
schematic

SHORT PRODUCT APPLICATION NOTE
These models incorporate 14 isolated capacitors of equal value. Capacitors are manufactured using silicon nitride dielectric. MNOS capacitors exhibit high stability, low temperature coefficients, low leakage <10nA and high BV>50Vpin.

SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION
Integrated passive networks are manufactured using advanced thin film technologies including ultra -stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. Semiconwell employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1 W/sq to 10,000 W/sq. All Semiconwell's products are available in die form and as KGD, known good die and are ideal for high reliability hybrid and multi chip module applications. Besides thin film resistors, Semiconwell integrates capacitors, Schottky diodes, Zener diodes and transistors. Integrated passive and active networks are manufactured using Semiconwell's in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form, these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space and weight are a concern.

CAPACITOR SPECIFICATIONS
Breakdown voltage BV Tolerance Power rating
50V ±20%, ±10% 50 mW@70°C

Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

ELECTRICAL CHARACTERISTICS
PARAMETER VALUE UNITS

Capacitance Tolerance
39pF - 270pF
270pF - 330pF


±10
±20
%
Capacitance Voltage Rating (25°C) 50 V

GENERAL DIE INFORMATION
Substrate Thickness (mils) Die size (mils) Bonding pads Backside metal
SiO2 / Silicon 10±3 XX x YY ±3 4x4 mils, 3mm thick, 99.99% electroplated gold with a TiW barrier Au/Si compatible with eutectic and conductive epoxy die attach.
All Semiconwell products are available in die form for chip and wire hybrid circuits and multi chip modules applications. Typical delivery for standard die products is 3-4 weeks ARO. For Chip Scale Packaged (CSP) devices consult factory for an update on availability of certain products.

DIELECTRIC CAPACITORS CONDUCTORS
The dielectrics are Si3N4/SiO2 100% purity, are thermally grown silicon dioxide SiO2 and LPCVD, PECVD silicon nitride Si3N4 .Capacitors are available with single or dual dielectrics. Silicon nitride dielectric, MNOS capacitors exhibit high stability, low temperature coefficients, low leakage <10nA and high BV>50V.. The bonding pads are 3µm thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400°C in air without loss of adhesion. Custom backside metallizations are available upon special request for die products only.

DIE LAYOUT PACKAGE PIN OUT
layout / design pending schematic
CH=1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26,27,28
CH=1,2,3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26,27,28
BUS=7,8,10,12,14
BUS=7,8,10,12,14

STANDARD PRODUCTS ORDERING INFORMATION

C(pF) C  CODE SW PART # QSOP-28 TSSOP-28 BARE DIE-28
1.0 1P0 SWCI/1P0 -28QS -28TS -28BD
1.2 1P2 SWCI/1P2 -28QS -28TS -28BD
1.5 1P5 SWCI/1P5 -28QS -28TS -28BD
1.8 1P8 SWCI/1P8 -28QS -28TS -28BD
2.2 2P2 SWCI/2P2 -28QS -28TS -28BD
2.7 2P7 SWCI/2P7 -28QS -28TS -28BD
3.3 3P3 SWCI/3P3 -28QS -28TS -28BD
3.9 3P9 SWCI/3P9 -28QS -28TS -28BD
4.7 4P7 SWCI/4P7 -28QS -28TS -28BD
5.6 5P6 SWCI/5P6 -28QS -28TS -28BD
6.8 6P8 SWCI/6P8 -28QS -28TS -28BD
8.2 8P2 SWCI/8P2 -28QS -28TS -28BD
10 100 SWCI/100 -28QS -28TS -28BD
12 120 SWCI/120 -28QS -28TS -28BD
15 150 SWCI/150 -28QS -28TS -28BD
18 180 SWCI/180 -28QS -28TS -28BD
22 220 SWCI/220 -28QS -28TS -28BD
27 270 SWCI/270 -28QS -28TS -28BD
33 330 SWCI/330 -28QS -28TS -28BD
39 390 SWCI/390 -28QS -28TS -28BD
47 470 SWCI/470 -28QS -28TS -28BD
56 560 SWCI/560 -28QS -28TS -28BD
68 680 SWCI/680 -28QS -28TS -28BD
82 820 SWCI/820 -28QS -28TS -28BD
100 101 SWCI/101 -28QS -28TS -28BD
120 121 SWCI/121 -28QS -28TS -28BD
150 151 SWCI/151 -28QS -28TS -28BD
180 181 SWCI/181 -28QS -28TS -28BD
220 221 SWCI/221 -28QS -28TS -28BD
270 271 SWCI/271 -28QS -28TS -28BD
330 331 SWCI/331 -28QS -28TS -28BD

C [pF] C multiplier TOLERANCE PACKAGE
Find part #

SW PART # TOLERANCE QUANTITY QSOP-28 U/P($) TSSOP-28 U/P($) BARE DIE U/P($)
SWCI28/CCODE ±20% 5000pc -28QS   -28TS   -28BD  
SWCI28/CCODE ±20% 10,000pc -28QS   -28TS   -28BD  
SWCI28/CCODE ±10% 5000pc -28QS   -28TS   -28BD  
SWCI28/CCODE ±10% 10,000pc -28QS   -28TS   -28BD  
For custom products sold as bare tested die or known good die KGD, minimum order is 5000pc. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For special die level KGD requirements, different packaging or custom configurations, contact sw_sales@semiconwell.com.

INSTANT QUOTE
Semiconwell P/N Quantity E-mail    
 

Delivery for packaged RCD standard products is 6-8 weeks ARO. Certain items may be available from stock. For standard products available from stock, there is a minimum line item order of $250.0. Inventory is periodically updated. For 2500pc or larger orders, all surface mount packaged devices are shipped in tape on reel (T/R). For smaller quantities, it may vary. Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. On line Orders have to be verified, accepted and acknowledged by Semiconwell sales department in writing before, becoming non cancelable binding contracts.

Semiconwell guarantees continuous supply and availability of any of it's standard products provided minimum order quantities are met.

SEMICONWELL has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONWELL for its use, nor for any infringements of rights of third parties which may result from its use. SEMICONWELL reserves the right to revise the content or modify its product line without prior notice. SEMICONWELL products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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