Semiconwell manufactures passive network components, integrated active and passive devices, resistor networks, capacitor networks, schottky and zener diode networks, and npn, pnp transistors arrays that perform the following functions: series and parallel linear and nonlinear GTL, AC, Diode, Thevenin termination networks, precision thin film resistor capacitor networks (RC networks), isolated, bussed resistor networks including zero ohms jumper arrays, voltage divider networks, resistor networks for audio applications, EMI, RFI and ESD zener clamped diodes and transient voltage suppressors networks, EMI/RFI filter networks and clock terminations. Semiconwell's proprietary semiconductor technology, advanced thin films processes, in house assembly and packaging technologies allow manufacturing of flip chip CSP chip scale and MLF molded lead frame surface mount integrated passive networks that include unprecedented large capacitors >1microfarad (1µF) and giga ohms resistors (GW). Generic Edit Space SEMICONWELL PRODUCTS AVAILABLE IN CHIP SCALE PACKAGE (CSP) SEMICONWELL PRODUCTS AVAILABLE IN CHIP SCALE PACKAGE SWT-CSP-S, T FILTER, EMI/RFI T-FILTER CHIP SCALE SILICON SWT-CSP-Q, T FILTER, EMI/RFI T-FILTER CHIP SCALE QUARTZ SWTF-CSP-S, TAPPED EMI/RFI FILTERS, CHIP SCALE SILICON SWTF-CSP-Q, TAPPED EMI/RFI FILTERS, CHIP SCALE QUARTZ SWT-CSP-C, T FILTER, EMI/RFI T-FILTER CHIP SCALE CERAMIC SWTVS-CSP TRANSIENT VOLTAGE SUPRESSORS CHIP SCALE SWTF-CSP-C, TAPPED EMI/RFI FILTERS, CHIP SCALE CERAMIC SWRG-CSP GTL/ECL TERMINATION CHIP SCALE CERAMIC SWPIESD-CSP CRC ESD PROTECTED PI FILTERS CHIP SCALE SEMICONWELL PRODUCTS AVAILABLE IN CHIP SCALE PACKAGE

 
 
SEMICONWELL
Integrated Passive Networks
  TRANSIENT VOLTAGE SUPRESSOR DUAL
SW TVS-CSP-1
 
 

FEATURES
APPLICATIONS
SCHEMATIC
Single channel voltage suppressor in a surface mount EIA standard 0402-sized device
Compact 0402 size saves board space and eases layout in area critical applications compared to traditional wire bonded IC packages.
In-system ESD protection to 30kV contact discharge per IEC 61000-4-2 international ESD standard.
Only 1nA leakage at 3.3V (typ.).
 
Lead-free versions available
Cell phones
PDAs
Palmtop PCs
Notebook PCs
Set-top box audio and video ports, PCMCIA cards (PC card)
Protection of interface ports or IC pins which are exposed to ESD hazards
schematic

SHORT PRODUCT APPLICATION NOTE
The SWTVS-CSP-1 is a transient voltage suppressor that is ideal for very high level protection for sensitive 5V electronic components that may be subjected to electrostatic discharge (ESD). The bipolar configuration provides symmetrical ESD protection in cases where nodes with AC signals are present. This device is designed and characterized to safely dissipate ESD strikes at 30kV contact discharge, well beyond the maximum requirements of the IEC 61000-4-2 international standard (Level 4, 8kV contact discharge). Using the MIL-STD-883D (Method 3015) specification for Human Body Model (HBM) ESD, signal pins are protected for contact discharges to greater than 30kV.

SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION
Integrated passive networks are manufactured using advanced thin film technologies including ultra -stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. Semiconwell employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10,000 W/sq. All Semiconwell's products are available in die form and as KGD, known good die and are ideal for high reliability hybrid and multi chip module applications. Besides thin film resistors, Semiconwell integrates capacitors, Schottky diodes, Zener diodes and transistors. Integrated passive and active networks are manufactured using Semiconwell's in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form, these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space and weight are a concern.

ABSOLUTE MAXIMUM RATINGS
Reverse voltage VR Continuous IF IFRM for tw<100ms Max Power dissipation
7V 100mA 200 mA (20%duty cycle) 100mW@70°C/channel

Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

ELECTRICAL CHARACTERISTICS
PARAMETER VALUE UNITS
Reverse Stand-off Voltage, I=10µA
+/-5.9
V
Leakage current with 3.3V across device
typ.1 max.100
nA
Signal Clamp Voltage:Positive Clamp ,10 mA
min.6.0, typ.7.5, max. 9.2
V
Signal Clamp Voltage:Negative Clamp ,10 mA
min.9.2, typ.7.5, max. 6.0
V

In-system ESD withstand voltage ;
Human Body Model, MIL-STD-883,Method 3015
Contact Discharge per IEC 61000-4-2 Level 4


min.±30
min.±30


kV
kV
Clamping Voltage during ESD Discharge MIL-STD-883 (Method 3015), 8kV
typ.13
V
Capacitance at 0V , 1MHz
typ.45
pF
Operating Temperature Range
-40 to +85
°C
Storage Temperature Range
-65 to +150
°C

GENERAL DIE INFORMATION
Substrate Thickness (mils) Die size (mils) Bonding pads Backside metal
Silicon / SiO2 10±2 xx ±yy 3 4X4 mils, 3µm thick 99.99% electroplated gold with TiW barrier that withstand 30 min at 400 °C in air without loss of adhesion. Au/Si compatible with eutectic and conductive epoxy die atach.
All Semiconwell products are available in die form for chip and wire hybrid circuits and multi chip modules applications. Typical delivery for standard die products is 3-4 weeks ARO. For Chip Scale Packaged (CSP) devices consult factory for an update on availability of certain products.

DIODES CONDUCTORS CAPACITORS
TVS diodes using solid state silicon avalanche technology are characterized by their high surge capability, low operating and clamping voltages, fast response time and low leakage current The bonding pads are gold with a TiW barrier that withstands 30 min at 400°C in air without loss of adhesion. Silicon nitride dielectric, MNOS capacitors exhibit high stability, low temperature coefficients, low leakage <10nA and high BV>50V.

DIE LAYOUT PACKAGE PIN OUT
package schematic

STANDARD PRODUCTS ORDERING INFORMATION

SW PART# CSP BD
SWTVS -CSP-1 SWTVS-BD1

  Semiconwell P/N Quantity E-mail    
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Delivery for packaged RCD standard products is 6-8 weeks ARO. Certain items may be available from stock. For standard products available from stock, there is a minimum line item order of $250.0. Inventory is periodically updated. For 2500pc or larger orders, all surface mount packaged devices are shipped in tape on reel (T/R). For smaller quantities, it may vary. Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. On line Orders have to be verified, accepted and acknowledged by Semiconwell sales department in writing before, becoming non cancelable binding contracts.

Semiconwell guarantees continuous supply and availability of any of it's standard products provided minimum order quantities are met.

SEMICONWELL has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONWELL for its use, nor for any infringements of rights of third parties which may result from its use. SEMICONWELL reserves the right to revise the content or modify its product line without prior notice. SEMICONWELL products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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