Schottky diodes arrays PACDN compatible; PACDN005Q, PACDN005S;SWDN series, 12mA,16mA,50mA,100mA clamp Schottky Diode Networks,8 channels,16 channels,24 channels,32 channels surface mount and bare die arrays, manufactured by Semiconwell

SWDN005 series, 50mA 18 channels Integrated clamp Schottky diode network available in surface mount package and as known good die KGD is a low power and low noise solution for reducing reflections on high speed data lines. Schottky diodes arrays PACDN compatible; PACDN005Q, PACDN005S;SWDN series, 12mA,16mA,50mA,100mA clamp Schottky Diode Networks,8 channels,16 channels,24 channels,32 channels surface mount and bare die arrays, manufactured by Semiconwell. Reflection on high speed data lines leads to undershoot and overshoot disturbances which may result in improper system operation. Resistor terminations used in parallel or in series with the outputs, when used to terminate high speed data lines, can increase power consumption, degrade the high level output and lower noise immunity or increase propagation delays. Schottky diode termination is the best overall solution for applications in which power consumption and noise immunity are critical considerations. Clamp Schottky diode networks provide optimized lead inductance and parasitic capacitive effects (see added ground pins), improved forward voltage and crosstalk attributes, and best termination performance characteristics at high data transmission rates. Maximum 36 integrated diodes in a single package offers 18 channels, dual rail clamping action Provides proper bus termination independent of external line or card loading conditions Schottky diode technlogy; excelent forward voltage and reverse recovery characteristics Saves board space and eases layout in space critical bus termination applications versus discrete approaches PCI v2.1 Bus Termination for Intel-based Pentium® and Pentium Pro systems Local high speed bus termination for all popular RISC and embedded microprocesor applications High speed memory and SDRAM memory bus termination



SEMICONWELL Integrated Passive Networks		CLAMP SCHOTTKY DIODE NETWORK 50mA, 4 CHANNELS SW DN005-8

FEATURES

APPLICATIONS

SCHEMATIC

8 integrated diodes in a single package offers 4 channels, dual rail clamping action

Provides proper bus termination independent of external line or card loading conditions

Schottky diode technlogy; excelent forward voltage and reverse recovery characteristics

Saves board space and eases layout in space critical bus termination applications versus discrete approaches

PCI v2.1 Bus Termination for Intel-based Pentium® and Pentium Pro systems

Local high speed bus termination for all popular RISC and embedded microprocesor applications

High speed memory and SDRAM memory bus termination

SHORT PRODUCT APPLICATION NOTE

Integrated clamp Schottky diode network is a low power and low noise solution for reducing reflections on high speed data lines. Reflection on high speed data lines leads to undershoot and overshoot disturbances which may result in improper system operation. Resistor terminations used in parallel or in series with the outputs, when used to terminate high speed data lines, can increase power consumption, degrade the high level output and lower noise immunity or increase propagation delays. Schottky diode termination is the best overall solution for applications in which power consumption and noise immunity are critical considerations. Clamp Schottky diode networks provide optimized lead inductance and parasitic capacitive effects (see added ground pins), improved forward voltage and crosstalk attributes, and best termination performance characteristics at high data transmission rates.

SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION

Schottky diode networks are manufactured using Semiconwell's in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form, these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space and weight are a concern.

ABSOLUTE MAXIMUM RATINGS
Reverse voltage V_R	Continuous I_F	I_FRM for t_w<100ms	Max Power dissipation
7V	50mA	100 mA (20%duty cycle)	1000mW@70°C/package

Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

ELECTRICAL CHARACTERISTICS
PARAMETER	VALUE	UNITS
Supply Voltage (V_DD)	-0.3...+7	V
Voltage at any Channel Input (V_signal)	-0.3...(VDD+0.3)	V
Channel Clamp Current ( I_clamp)	±50	mA
Power Dissipation (I_F< 10mA/Channel; TA=25°C) (P_d)	1	W
Operating Temperature (T_OP)	0 to 70	°C
Storage Temperature (T_stg)	-65 to +150	°C
Diode Forward Voltage @I_F = 16mA	typ. 0.50 max. 0.65	V
Diode Forward Voltage @I_F = 50mA	min. 0.50 typ. 0.65 max. 0.85	V
Channel Leakage(0<V_in<V_DD)	typ. 0.1 max. 5	µA
Input capacitance @1MHz, Vin=2.5V, Vdd=5.0V	<5	pF
Reverse recovery time @IF=50mA	400	ps

GENERAL DIE INFORMATION
Substrate	Thickness (mils)	Die size (mils)	Bonding pads	Backside metal
Si / Silicon	10±2	45 x 45 ±3	4x4 mils, 3mm thick, 99.99% electroplated gold with a TiW barrier	Au/Si compatible with eutectic and conductive epoxy die attach.
All Semiconwell products are available in die form for chip and wire hybrid circuits and multi chip modules applications. Typical delivery for die products is 6 weeks ARO. For Chip Scale Packaged (CSP) devices consult factory for an update on availability of certain products.

SCHOTTKY DIODES	RESISTORS	CAPACITORS
Schottky diodes offers basic ESD protection, with low forward voltage and low power dissipation. Diodes are small physically resulting low junction capacitance and low loading capacitance.	The bonding pads are 3µm thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400°C in air without loss of adhesion.	Silicon nitride dielectric, MNOS capacitors exhibit high stability, low temperature coefficients, low leakage <10nA and high BV>50V.

DIE LAYOUT	PACKAGE PIN OUT

Vin=2,3,6,7
Vss=die backside
Vss=1,5
Vdd=4,8

STANDARD PRODUCTS ORDERING INFORMATION

SW PART #	QUANTITY	SOIC-8	U/P($)	PDIP-8	U/P($)	BARE DIE	U/P($)
SWDN005	5000pc	-8SO	$0.34	-8DP	$0.42	-8BD	$0.73
SWDN005	10,000pc	-8SO	$0.32	-8DP	$0.40	-8BD	$0.71

For products sold as bare tested die or known good die KGD, minimum order is 5000pc. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For special die level KGD requirements, different packaging or custom configurations, contact sw_sales@semiconwell.com

Delivery for packaged RCD standard products is 6-8 weeks ARO. Certain items may be available from stock. For standard products available from stock, there is a minimum line item order of $250.0. Inventory is periodically updated. For 2500pc or larger orders, all surface mount packaged devices are shipped in tape on reel (T/R). For smaller quantities, it may vary. Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. On line Orders have to be verified, accepted and acknowledged by Semiconwell sales department in writing before, becoming non cancelable binding contracts.

Semiconwell guarantees continuous supply and availability of any of it's standard products provided minimum order quantities are met.

SEMICONWELL has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONWELL for its use, nor for any infringements of rights of third parties which may result from its use. SEMICONWELL reserves the right to revise the content or modify its product line without prior notice. SEMICONWELL products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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