15V LOW VCESAT PNP TRANSISTOR AND RESISTOR EQUIPPED NPN SWITCH SW PBLS1503V FEATURES Low Vcesat transistor and resistor-equipped transistor in one package Very small 1.6 x 1.2 mm ultra thin package Reduction of component count. APPLICATIONS Battery charger switches Line switches Power supply switches Drive switches General purpose analog switches. SHORT PRODUCT APPLICATION NOTE Low VCEsat PNP transistor and NPN resistor-equipped transistor in a SOT666 plastic package . SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION Integrated passive networks are manufactured using advanced thin film technologies including ultra -stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. Semiconwell employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10,000 W/sq. All Semiconwell's products are available in die form and as KGD, known good die and are ideal for high reliability hybrid and multi chip module applications. Besides thin film resistors, Semiconwell integrates capacitors, Schottky diodes, Zener diodes and transistors. Integrated passive and active networks are manufactured using Semiconwell's in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form, these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space and weight are a concern. VCBO,collector-base voltage -15 V VCEO,collector-emitter voltage -15 V VEBO, emitter-base voltage -6 V IC, collector current (DC) -500 mA ICM, peak collector current -1 A IBM, peak base current -100 mA PDtotal power dissipation,Tamb =25C; note 1 200 mW Transistor TR2 VCBO,collector-base voltage 50 V VCEO,collector-emitter voltage 50 V VEBO, emitter-base voltage 10 V Vi,input voltage positive negative +40 -10 V V Io, output current (DC) 100 mA ICM,peak collector current 100 mA PDtotal power dissipation,Tamb =25C; note 1 200 mW Per device PDtotal power dissipation,Tamb =25C; note 1 300 mW TstgStorageTemperature Range -65 to +150 C TambOperating Ambient Temperature Range -65 to +150 C Tjjunction temperature max. +150 C THERMAL CHARACTERISTICS PER DEVICE Rth j-athermal resistance from junction to ambient Note 1 and 2 416 K/W Note 1:Transistor mounted on an FR4 printed-circuit board. Note 2: The only recommended soldering method is reflow soldering. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. ELECTRICAL CHARACTERISTICS Tamb =25C unless specified. PARAMETER VALUE UNITS Transistor TR1 ICBO,collector-base cut-off current, VCB = -15 V, IE = 0. VCB = -15 V; IE = 0; Tj = 150 C max.-100 max.-50 nA nA IEBO, emitter-base cut-off current,VEB = -5 V; IC =0 max.-100 nA VCEsat,collector-emitter saturation voltage, IC = -10 mA; IB = -0.5 mA IC = -200 mA; IB = -10 mA IC = -500 mA; IB = -50 mA; note 1 max.- 25 max. -150 max. -250 mV mV mV hFE, DC current gain IC = -10 mA, VCE = -2.0 V IC = -100 mA, VCE = -2.0 V, Note 1 IC = -500 mA, VCE = -2.0 V, Note 1 min.200 min.150 min.90 RCEsatequivalent on-resistance,IC = -500 mA; IB = -50 mA; note 1 typ.300 max.500 mW VBEsatbase-emitter saturation voltage Note 1 IC = -500 mA; IB = -50 mA max.-1.1 V VBE, base-emitter turn on voltage,VCE = -2 V; IC = -100 mA; note 1 max.-0.9 V Cc,collector capacitance,VCB = -10 V; IE =Ie = 0; f = 1 MHz max.10 pF fT,transition frequency IC = -100 mA; VCE = -5 V; f = 100 MHz min.100 typ.280 MHz Transistor TR1 ICBO,collector-base cut-off current,VCB = 50 V; IE =0 max.100 nA IEBO, emitter-base cut-off current,VEB = 5 V; IC =0 max.400 mA ICEO,collector-emitter cut-off current, VCE = 50 V; IB =0 VCE = 30 V; IB = 0; Tj = 150 C max. 1 max. 50 mA mA hFE, DC current gain,VCE =5 V; IC = 5 mA min 30 VCEsat,collector-emitter saturation voltage,IC = 10 mA; IB = 0.5 mA max.150 mV Vi(off) ,input off voltage,VCE =5 V; IC = 100 mA max.0.5 V Vi(on),input on voltage,VCE = 0.3 V; IC = 10 mA min. 2.5 V R1,input resistor min.7 typ.10 max.13 kW R2/R1, resistor ratio min.0.8 typ.1 max.1.2 Cc, collector capacitance,VCB = 10 V; IE =Ie = 0; f = 1 MHz max.2.5 pF Note 1: Pulse test: tp <= 300 ms; d<=0.02. GENERAL DIE INFORMATION Substrate Thickness (mils) Die size (mils) Bonding pads Backside metal Silicon 10 0.5 xx x yy1 4x4 mils, 3mm thick, 99.99% electroplated gold with a TiW barrier Au/Si compatible with eutectic and conductive epoxy die attach. All Semiconwell products are available in die form for chip and wire hybrid circuits and multi chip modules applications. Typical delivery for standard die products is 3-4 weeks ARO. For Chip Scale Packaged (CSP) devices consult factory for an update on availability of certain products. RESISTORS Ultra stable TaN with low TCR <75ppm/C typical. For Rsq<10W/sq and Rsq>500W/sq, resistive material is proprietary. Power rating/resistor max 100mW for R<1KW and 25mW for R>1KW. Standard tolerance is 5%. Silicon nitride dielectric, MNOS capacitors exhibit high stability, low temperature coefficients, low leakage <10nA and high BV>50V. DIE LAYOUT PACKAGE PIN OUT design pending STANDARD PRODUCTS ORDERING INFORMATION SOT666 SOT326 BARE DIE SW PBLS1503V-SOT666 SW PBLS1503V-SOT326 SW PBLS1503V-BD SW PART # QUANTITY SOT-666 U/P($) SOT-326 U/P($) BARE DIE U/P($) SW PBLS1503V 5,000pc -SOT666 -SOT666 -BD SW PBLS1503V 10,000pc -SOT666 -SOT666 -BD List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting SEMICONWELL technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by SEMICONWELL at any time and without notice. For products sold as bare tested die or known good die KGD, minimum order is 5000pc. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For special die level KGD requirements, different packaging or custom configurations, contact sw_sales@semiconwell.com Semiconwell P/N Quantity E-mail Receive Instant Quote -SOT326 -SOT666 -BD Delivery for packaged RCD standard products is 6-8 weeks ARO. Certain items may be available from stock. For standard products available from stock, there is a minimum line item order of $250.0. Inventory is periodically updated. For 2500pc or larger orders, all surface mount packaged devices are shipped in tape on reel (T/R). For smaller quantities, it may vary. Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. On line Orders have to be verified, accepted and acknowledged by Semiconwell sales department in writing before, becoming non cancelable binding contracts. Semiconwell guarantees continuous supply and availability of any of it's standard products provided minimum order quantities are met. SEMICONWELL has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONWELL for its use, nor for any infringements of rights of third parties which may result from its use. SEMICONWELL reserves the right to revise the content or modify its product line without prior notice. SEMICONWELL products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

 
 
SEMICONWELL
Integrated Passive Networks
  15V LOW VCESAT PNP TRANSISTOR AND RESISTOR EQUIPPED NPN SWITCH
SW PBLS1503V
 
 

FEATURES
APPLICATIONS
SCHEMATIC
Low Vcesat transistor and resistor-equipped transistor in one package
Very small 1.6 x 1.2 mm ultra thin package
Reduction of component count.
Battery charger switches
Line switches
Power supply switches
Drive switches
General purpose analog switches.

SHORT PRODUCT APPLICATION NOTE
Low VCEsat PNP transistor and NPN resistor-equipped transistor in a SOT666 plastic package .

SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION
Integrated passive networks are manufactured using advanced thin film technologies including ultra -stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. Semiconwell employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10,000 W/sq. All Semiconwell's products are available in die form and as KGD, known good die and are ideal for high reliability hybrid and multi chip module applications. Besides thin film resistors, Semiconwell integrates capacitors, Schottky diodes, Zener diodes and transistors. Integrated passive and active networks are manufactured using Semiconwell's in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form, these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space and weight are a concern.

ABSOLUTE MAXIMUM RATINGSTamb =25 °C
PARAMETER VALUE UNITS
Transistor TR1

VCBO,collector-base voltage

-15 V
VCEO,collector-emitter voltage
-15 V
VEBO, emitter-base voltage
-6 V
IC, collector current (DC)
-500 mA
ICM, peak collector current
-1 A
IBM, peak base current
-100 mA
PDtotal power dissipation,Tamb =25°C; note 1
200 mW
Transistor TR2

VCBO,collector-base voltage

50 V
VCEO,collector-emitter voltage
50
V
VEBO, emitter-base voltage
10 V
Vi,input voltage
positive
negative

+40
-10 

V
Io, output current (DC)
100
mA
ICM,peak collector current
100
mA
PDtotal power dissipation,Tamb =25°C; note 1
200 mW
Per device
PDtotal power dissipation,Tamb =25°C; note 1
300 mW
TstgStorageTemperature Range
-65 to +150
°C
TambOperating Ambient Temperature Range
-65 to +150
°C
Tjjunction temperature
max. +150
°C
THERMAL CHARACTERISTICS PER DEVICE
Rth j-athermal resistance from junction to ambient Note 1 and 2
416
K/W
Note 1:Transistor mounted on an FR4 printed-circuit board.
Note 2: The only recommended soldering method is reflow soldering.

Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

ELECTRICAL CHARACTERISTICS Tamb =25°C unless specified.
PARAMETER VALUE UNITS
Transistor TR1
ICBO,collector-base cut-off current,
VCB = -15 V, IE = 0.
VCB = -15 V; IE = 0; Tj = 150 C

max.-100
max.-50

nA
nA
IEBO, emitter-base cut-off current,VEB = -5 V; IC =0
max.-100
nA
VCEsat,collector-emitter saturation voltage,
IC = -10 mA; IB = -0.5 mA
IC = -200 mA; IB = -10 mA
IC = -500 mA; IB = -50 mA; note 1

max.- 25
max. -150
max. -250

mV
mV
mV
 hFE, DC current gain
IC = -10 mA, VCE = -2.0 V
IC = -100 mA, VCE = -2.0 V, Note 1
IC = -500 mA, VCE = -2.0 V, Note 1

min.200
min.150
min.90
 RCEsatequivalent on-resistance,IC = -500 mA; IB = -50 mA; note 1
typ.300 max.500
mW
 VBEsatbase-emitter saturation voltage Note 1 IC = -500 mA; IB = -50 mA
max.-1.1
V
 VBE, base-emitter turn on voltage,VCE = -2 V; IC = -100 mA; note 1
max.-0.9
V
 Cc,collector capacitance,VCB = -10 V; IE =Ie = 0; f = 1 MHz
max.10
pF
 fT,transition frequency IC = -100 mA; VCE = -5 V; f = 100 MHz
min.100 typ.280
MHz
Transistor TR1
ICBO,collector-base cut-off current,VCB = 50 V; IE =0
max.100
nA
IEBO, emitter-base cut-off current,VEB = 5 V; IC =0
max.400
mA
ICEO,collector-emitter cut-off current,
VCE = 50 V; IB =0
VCE = 30 V; IB = 0; Tj = 150 C

max. 1
max. 50

mA
mA
hFE, DC current gain,VCE =5 V; IC = 5 mA
min 30
VCEsat,collector-emitter saturation voltage,IC = 10 mA; IB = 0.5 mA
max.150
mV
Vi(off) ,input off voltage,VCE =5 V; IC = 100 mA
max.0.5
V
Vi(on),input on voltage,VCE = 0.3 V; IC = 10 mA
min. 2.5
V
R1,input resistor
min.7 typ.10 max.13
kW
R2/R1, resistor ratio
min.0.8 typ.1 max.1.2
Cc, collector capacitance,VCB = 10 V; IE =Ie = 0; f = 1 MHz
max.2.5
pF

Note 1: Pulse test: tp </= 300 ms; d</=0.02.


GENERAL DIE INFORMATION
Substrate Thickness (mils) Die size (mils) Bonding pads Backside metal
Silicon 10 ±0.5 xx x yy±1 4x4 mils, 3mm thick, 99.99% electroplated gold with a TiW barrier Au/Si compatible with eutectic and conductive epoxy die attach.
All Semiconwell products are available in die form for chip and wire hybrid circuits and multi chip modules applications. Typical delivery for standard die products is 3-4 weeks ARO. For Chip Scale Packaged (CSP) devices consult factory for an update on availability of certain products.

SEMICONDUCTORS RESISTORS CAPACITORS
All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. Ultra stable TaN with low TCR <75ppm/C typical. For Rsq<10W/sq and Rsq>500W/sq, resistive material is proprietary. Power rating/resistor max 100mW for R<1KW and 25mW for R>1KW. Standard tolerance is ±5%. Silicon nitride dielectric, MNOS capacitors exhibit high stability, low temperature coefficients, low leakage <10nA and high BV>50V.

DIE LAYOUT PACKAGE PIN OUT
design pending
Vin=3,4,5,6,11,12,13,14
Vss=die backside
Vss=1,8,9,16
Vdd=2,7,10,15

STANDARD PRODUCTS ORDERING INFORMATION

SOT666 SOT326 BARE DIE
SW PBLS1503V-SOT666 SW PBLS1503V-SOT326 SW PBLS1503V-BD

SW PART # QUANTITY SOT-666 U/P($) SOT-326 U/P($) BARE DIE U/P($)
SW PBLS1503V   5,000pc -SOT666   -SOT666   -BD  
SW PBLS1503V 10,000pc -SOT666   -SOT666   -BD  
List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting SEMICONWELL technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by SEMICONWELL at any time and without notice.
For products sold as bare tested die or known good die KGD, minimum order is 5000pc. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For special die level KGD requirements, different packaging or custom configurations, contact sw_sales@semiconwell.com

  Semiconwell P/N Quantity E-mail    
Receive Instant Quote
 

Delivery for packaged RCD standard products is 6-8 weeks ARO. Certain items may be available from stock. For standard products available from stock, there is a minimum line item order of $250.0. Inventory is periodically updated. For 2500pc or larger orders, all surface mount packaged devices are shipped in tape on reel (T/R). For smaller quantities, it may vary. Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. On line Orders have to be verified, accepted and acknowledged by Semiconwell sales department in writing before, becoming non cancelable binding contracts.

Semiconwell guarantees continuous supply and availability of any of it's standard products provided minimum order quantities are met.

SEMICONWELL has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONWELL for its use, nor for any infringements of rights of third parties which may result from its use. SEMICONWELL reserves the right to revise the content or modify its product line without prior notice. SEMICONWELL products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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Last update: July 18, 2013
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