| 15V LOW VCESAT PNP TRANSISTOR AND RESISTOR EQUIPPED NPN SWITCH SW PBLS1504V FEATURES Low Vcesat transistor and resistor-equipped transistor in one package Very small 1.6x1.2 mm ultra thin package Reduction of component count. APPLICATIONS Battery charger switches Line switches Power supply switches Drive switches General purpose analog switches. SHORT PRODUCT APPLICATION NOTE Low Vcesat PNP transistor and NPN resistor-equipped transistor in a SOT666 plastic package . SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION Integrated passive networks are manufactured using advanced thin film technologies including ultra -stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. Semiconwell employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10,000 W/sq. All Semiconwell's products are available in die form and as KGD, known good die and are ideal for high reliability hybrid and multi chip module applications. Besides thin film resistors, Semiconwell integrates capacitors, Schottky diodes, Zener diodes and transistors. Integrated passive and active networks are manufactured using Semiconwell's in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form, these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space and weight are a concern. ABSOLUTE MAXIMUM RATINGSTamb =25 °C PARAMETER VALUE UNITS Transistor TR1 VCBO,collector-base voltage -15 V VCEO,collector-emitter voltage -15 V VEBO, emitter-base voltage -6 V IC, collector current (DC) -500 mA ICM, peak collector current -1 A IBM, peak base current -100 mA PDtotal power dissipation,Tamb =25°C; note 1 200 mW Transistor TR2 VCBO,collector-base voltage 50 V VCEO,collector-emitter voltage 50 V VEBO, emitter-base voltage 10 V Vi,input voltage positive negative +40 -10 V V Io, output current (DC) 100 mA ICM,peak collector current 100 mA PDtotal power dissipation,Tamb =25°C; note 1 200 mW Per device PDtotal power dissipation,Tamb =25°C; note 1 300 mW TstgStorageTemperature Range -65 to +150 °C TambOperating Ambient Temperature Range -65 to +150 °C Tjjunction temperature max. +150 °C THERMAL CHARACTERISTICS PER DEVICE Rth j-athermal resistance from junction to ambient Note 1 and 2 416 K/W Note 1:Transistor mounted on an FR4 printed-circuit board. Note 2: The only recommended soldering method is reflow soldering. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. ELECTRICAL CHARACTERISTICS Tamb =25°C unless specified. PARAMETER VALUE UNITS Transistor TR1 ICBO,collector-base cut-off current, VCB = -15 V, IE = 0. VCB = -15 V; IE = 0; Tj = 150 °C max.-100 max.-50 nA nA IEBO, emitter-base cut-off current,VEB = -5 V; IC =0 max.-100 nA VCEsat,collector-emitter saturation voltage, IC = -10 mA; IB = -0.5 mA IC = -200 mA; IB = -10 mA IC = -500 mA; IB = -50 mA; note 1 max.- 25 max. -150 max. -25 mV mV mV hFE, DC current gain IC = -10 mA, VCE = -2.0 V IC = -100 mA, VCE = -2.0 V, Note 1 IC = -500 mA, VCE = -2.0 V, Note 1 min.200 min.150 min.90 RCEsatequivalent on-resistance,IC = -500 mA; IB = -50 mA; note 1 typ.300 max.500 mW VBEsatbase-emitter saturation voltage Note 1 IC = -500 mA; IB = -50 mA max.-1.1 V VBE, base-emitter turn on voltage,VCE = -2 V; IC = -100 mA; note 1 max.-0.9 V Cc,collector capacitance,VCB = -10 V; IE =Ie = 0; f = 1 MHz max.10 pF fT,transition frequency IC = -100 mA; VCE = -5 V; f = 100 MHz min.100 typ.280 MHz Transistor TR1 ICBO,collector-base cut-off current,VCB = 50 V; IE =0 max.100 nA IEBO, emitter-base cut-off current,VEB = 5 V; IC =0 max.180 mA ICEO,collector-emitter cut-off current, VCE = 50 V; IB =0 VCE = 30 V; IB = 0; Tj = 150 °C max. 1 max. 50 mA mA hFE, DC current gain,VCE =5 V; IC = 5 mA min 60 VCEsat,collector-emitter saturation voltage,IC = 10 mA; IB = 0.5 mA max.150 mV Vi(off) ,input off voltage,VCE =5 V; IC = 100 mA typ. 1.1 max.0.8 V Vi(on),input on voltage,VCE = 0.3 V; IC = 10 mA min. 2.5 typ 1.7 V R1,input resistor min.15.4 typ.22 max.28.6 kW R2/R1, resistor ratio min.0.8 typ.1 max.1.2 Cc, collector capacitance,VCB = 10 V; IE =Ie = 0; f = 1 MHz max.2.5 pF Note 1: Pulse test: tp <= 300 ms; d<=0.02. GENERAL DIE INFORMATION Substrate Thickness (mils) Die size (mils) Bonding pads Backside metal Silicon 10±0.5 xx x yy ±1 4x4 mils, 3mm thick, 99.99% electroplated gold with a TiW barrier Au/Si compatible with eutectic and conductive epoxy die attach. All Semiconwell products are available in die form for chip and wire hybrid circuits and multi chip modules applications. Typical delivery for standard die products is 3-4 weeks ARO. For Chip Scale Packaged (CSP) devices consult factory for an update on availability of certain products. SEMICONDUCTORS RESISTORS CAPACITORS All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. Ultra stable TaN with low TCR <75ppm/°C typical. For Rsq<10W/sq and Rsq>500W/sq, resistive material is proprietary. Power rating/resistor max 100mW for R<1KW and 25mW for R>1KW. Standard tolerance is ±5%. Silicon nitride dielectric, MNOS capacitors exhibit high stability, low temperature coefficients, low leakage <10nA and high BV>50V. DIE LAYOUT PACKAGE PIN OUT TANDARD PRODUCTS ORDERING INFORMATION SOT666 SOT326 BARE DIE SW PBLS1504V-SOT666 SW PBLS1504V-SOT326 SW PBLS1504V-BD SW PART # QUANTITY SOT-666 U/P($) SOT-326 U/P($) BARE DIE U/P($) SW PBLS1504V 5,000pc -SOT666 -SOT326 -BD SW PBLS1504V 10,000pc -SOT666 -SOT326 -BD For products sold as bare tested die or known good die KGD, minimum order is 5000pc. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For special die level KGD requirements, different packaging or custom configurations, contact sw_sales@semiconwell.com Semiconwell P/N Quantity E-mail Receive Instant Quote -SOT326 -SOT666 -BD Delivery for packaged RCD standard products is 6-8 weeks ARO. Certain items may be available from stock. For standard products available from stock, there is a minimum line item order of $250.0. Inventory is periodically updated. For 2500pc or larger orders, all surface mount packaged devices are shipped in tape on reel (T/R). For smaller quantities, it may vary. Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. On line Orders have to be verified, accepted and acknowledged by Semiconwell sales department in writing before, becoming non cancelable binding contracts. Semiconwell guarantees continuous supply and availability of any of it's standard products provided minimum order quantities are met. SEMICONWELL has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONWELL for its use, nor for any infringements of rights of third parties which may result from its use. SEMICONWELL reserves the right to revise the content or modify its product line without prior notice. SEMICONWELL products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. |
| SEMICONWELL
Integrated Passive Networks |
15V
LOW VCESAT PNP TRANSISTOR AND RESISTOR EQUIPPED NPN SWITCH SW PBLS1504V |
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| SHORT PRODUCT APPLICATION NOTE |
| Low Vcesat PNP transistor and NPN resistor-equipped transistor in a SOT666 plastic package . |
| SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION |
| Integrated passive networks are manufactured using advanced thin film technologies including ultra -stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. Semiconwell employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10,000 W/sq. All Semiconwell's products are available in die form and as KGD, known good die and are ideal for high reliability hybrid and multi chip module applications. Besides thin film resistors, Semiconwell integrates capacitors, Schottky diodes, Zener diodes and transistors. Integrated passive and active networks are manufactured using Semiconwell's in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form, these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space and weight are a concern. |
| ABSOLUTE MAXIMUM RATINGSTamb =25 °C | ||
| PARAMETER | VALUE | UNITS |
Transistor TR1 |
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|
VCBO,collector-base voltage |
-15 | V |
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VCEO,collector-emitter voltage |
-15 | V |
VEBO, emitter-base voltage |
-6 | V |
IC, collector current (DC) |
-500 | mA |
ICM, peak collector current |
-1 | A |
IBM, peak base current |
-100 | mA |
PDtotal power dissipation,Tamb =25°C; note 1 |
200 | mW |
Transistor TR2 |
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|
VCBO,collector-base voltage |
50 | V |
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VCEO,collector-emitter voltage |
|
V |
VEBO, emitter-base voltage |
10 | V |
Vi,input voltage positive negative |
+40 -10 |
V V |
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Io, output current (DC)
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ICM,peak collector current |
|
|
PDtotal power dissipation,Tamb =25°C; note 1 |
200 | mW |
Per device |
||
PDtotal power dissipation,Tamb =25°C; note 1 |
300 | mW |
TstgStorageTemperature Range |
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|
TambOperating Ambient Temperature Range |
|
|
Tjjunction temperature |
|
|
THERMAL CHARACTERISTICS PER DEVICE |
||
Rth j-athermal resistance from junction to ambient Note 1 and 2 |
416
|
|
Note 1:Transistor mounted on an FR4 printed-circuit board. Note 2: The only recommended soldering method is reflow soldering. |
||
| Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. |
| ELECTRICAL CHARACTERISTICS Tamb =25°C unless specified. | ||
| PARAMETER | VALUE | UNITS |
Transistor TR1 |
||
| ICBO,collector-base cut-off current, VCB = -15 V, IE = 0. VCB = -15 V; IE = 0; Tj = 150 °C |
max.-100 max.-50 |
nA nA |
| IEBO, emitter-base cut-off current,VEB = -5 V; IC =0 | max.-100 |
nA |
| VCEsat,collector-emitter saturation voltage, IC = -10 mA; IB = -0.5 mA IC = -200 mA; IB = -10 mA IC = -500 mA; IB = -50 mA; note 1 |
max.- 25 max. -150 max. -25 |
mV mV mV |
| hFE, DC current gain IC = -10 mA, VCE = -2.0 V IC = -100 mA, VCE = -2.0 V, Note 1 IC = -500 mA, VCE = -2.0 V, Note 1 |
min.200 min.150 min.90 |
|
| RCEsatequivalent on-resistance,IC = -500 mA; IB = -50 mA; note 1 | typ.300 max.500 |
mW |
| VBEsatbase-emitter saturation voltage Note 1 IC = -500 mA; IB = -50 mA | max.-1.1 |
V
|
| VBE, base-emitter turn on voltage,VCE = -2 V; IC = -100 mA; note 1 | max.-0.9 |
V |
| Cc,collector capacitance,VCB = -10 V; IE =Ie = 0; f = 1 MHz | max.10 |
pF |
| fT,transition frequency IC = -100 mA; VCE = -5 V; f = 100 MHz | min.100 typ.280 |
MHz |
| Transistor TR1 | ||
| ICBO,collector-base cut-off current,VCB = 50 V; IE =0 | max.100 |
nA |
| IEBO, emitter-base cut-off current,VEB = 5 V; IC =0 | max.180 |
mA |
| ICEO,collector-emitter cut-off current, VCE = 50 V; IB =0 VCE = 30 V; IB = 0; Tj = 150 °C |
max. 1 max. 50 |
mA mA |
| hFE, DC current gain,VCE =5 V; IC = 5 mA | min 60 |
|
| VCEsat,collector-emitter saturation voltage,IC = 10 mA; IB = 0.5 mA | max.150 |
mV |
| Vi(off) ,input off voltage,VCE =5 V; IC = 100 mA | typ. 1.1 max.0.8 |
V |
| Vi(on),input on voltage,VCE = 0.3 V; IC = 10 mA | min. 2.5 typ 1.7 |
V |
| R1,input resistor | min.15.4 typ.22 max.28.6 |
kW |
| R2/R1, resistor ratio | min.0.8 typ.1 max.1.2 |
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| Cc, collector capacitance,VCB = 10 V; IE =Ie = 0; f = 1 MHz | max.2.5 |
pF |
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Note 1: Pulse test: tp </= 300 ms; d</=0.02. |
||
| GENERAL DIE INFORMATION | ||||
| Substrate | Thickness (mils) | Die size (mils) | Bonding pads | Backside metal |
| Silicon | 10±0.5 | xx x yy ±1 | 4x4 mils, 3mm thick, 99.99% electroplated gold with a TiW barrier | Au/Si compatible with eutectic and conductive epoxy die attach. |
| All Semiconwell products are available in die form for chip and wire hybrid circuits and multi chip modules applications. Typical delivery for standard die products is 3-4 weeks ARO. For Chip Scale Packaged (CSP) devices consult factory for an update on availability of certain products. | ||||
| SEMICONDUCTORS | RESISTORS | CAPACITORS |
| All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. | Ultra stable TaN with low TCR <75ppm/°C typical. For Rsq<10W/sq and Rsq>500W/sq, resistive material is proprietary. Power rating/resistor max 100mW for R<1KW and 25mW for R>1KW. Standard tolerance is ±5%. | Silicon nitride dielectric, MNOS capacitors exhibit high stability, low temperature coefficients, low leakage <10nA and high BV>50V. |
| DIE LAYOUT | PACKAGE PIN OUT |
| design pending | |
| Vin=3,4,5,6,11,12,13,14 | |
| Vss=die backside | |
| Vss=1,8,9,16 | |
| Vdd=2,7,10,15 | |
| STANDARD PRODUCTS ORDERING INFORMATION |
| SOT666 | SOT326 | BARE DIE |
| SW PBLS1504V-SOT666 | SW PBLS1504V-SOT326 | SW PBLS1504V-BD |
| SW PART # | QUANTITY | SOT-666 | U/P($) | SOT-326 | U/P($) | BARE DIE | U/P($) |
| SW PBLS1504V | 5,000pc | -SOT666 | -SOT326 | -BD | |||
| SW PBLS1504V | 10,000pc | -SOT666 | -SOT326 | -BD | |||
| For products sold as bare tested die or known good die KGD, minimum order is 5000pc. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For special die level KGD requirements, different packaging or custom configurations, contact sw_sales@semiconwell.com | |||||||
| Delivery for packaged RCD standard products is 6-8 weeks ARO. Certain items may be available from stock. For standard products available from stock, there is a minimum line item order of $250.0. Inventory is periodically updated. For 2500pc or larger orders, all surface mount packaged devices are shipped in tape on reel (T/R). For smaller quantities, it may vary. Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. On line Orders have to be verified, accepted and acknowledged by Semiconwell sales department in writing before, becoming non cancelable binding contracts. |
| Semiconwell guarantees continuous supply and availability of any of it's standard products provided minimum order quantities are met. |
| SEMICONWELL has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONWELL for its use, nor for any infringements of rights of third parties which may result from its use. SEMICONWELL reserves the right to revise the content or modify its product line without prior notice. SEMICONWELL products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. |
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