SWDL1230-08 same as CM1230-08, LOW CAPACITANCE ESD PROTECTION ARRAY SWDL1230-08 manufactured by Semiconwell

SWDL1230-08 same as CM1230-08, LOW CAPACITANCE ESD PROTECTION ARRAY SWDL1230-08 FEATURES 2 channels of ESD protection Provides ESD protection to IEC61000-4-2 Level 4 ±8kV contact discharge;±15kV air discharge, Low loading capacitance of 0.8pF typical, Minimal capacitance change with temperature and voltage, Channel I/O to GND capacitance difference of 0.02pF typical is ideal for differential signals,Channel I/O to I/O capacitance 0.15pF typical APPLICATIONS LCD and Camera data lines in wireless handsets that use high-speed serial interfaces, I/O port protection for mobile handsets, notebook computers, DSCs, MP3 players, PDAs, etc. including USB, 1394 and Serial ATA, Wireless handsets,LCD and camera modules,Handheld PCs/PDAs SHORT PRODUCT APPLICATION NOTE SWDL1230 series are ideal for protecting systems with high data and clock rates or for circuits that require low capacitive loading. Each channel consists of a pair of ESD diodes that act as clamp diodes that steer positive or negative ESD current pulses to either the positive or negative supply rail. A zener diode is integrated into the array between the positive and negative supply rails. The VCC rail is thus protected from ESD strikes and eliminates the need for a bypass capacitor to absorb positive ESD strikes to ground. Each channel of the SWDL1230 can safely dissipate ESD strikes of ±8kV, meeting the Level 4 requirement of the IEC61000-4-2 international standard for contact discharges as well as ±15kV air discharges per the IEC61000-4-2 specification. Using the MIL-STD-883 (Method 3015) specification for Human Body Model (HBM) ESD, the pins are protected for contact discharges at greater than ±15kV.This device is particularly well-suited for next generation wireless handsets that implement high-speed serial interface solutions for the LCD display and camera interfaces. In these wireless handset designs, a tolerance above 1.5pF cannot be tolerated due to the high data rates that are transferred between the baseband chipset and the LCD driver/controller ICs because a higher capacitive loading will cause the rise and fall times to slow which in turn hampers the functionality of circuit and operation of the wireless handset. SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION Integrated passive networks are manufactured using advanced thin film technologies including ultra -stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. Semiconwell employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1 W/sq to 10,000 W/sq. All Semiconwell's products are available in die form and as KGD, known good die and are ideal for high reliability hybrid and multi chip module applications. Besides thin film resistors, Semiconwell integrates capacitors, Schottky diodes, Zener diodes and transistors. Integrated passive and active networks are manufactured using Semiconwell's in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form, these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space and weight are a concern. ABSOLUTE MAXIMUM RATINGS Operating Supply Voltage (VP - VN) 6V, Operating Temperature Range -40 to +85°C, Storage Temperature Range -65 to +150°C,DC Voltage at any channel input (VN - 0.5) to (VP + 0.5) V ELECTRICAL CHARACTERISTICS PARAMETER VALUE UNITS Operating Supply Voltage (VP-VN) typ.3.3 max.5.5 V Operating Supply Current,(VP-VN)=3.3V max.8 µA Diode Forward Voltage,IF = 8mA; TA=25°C min.0.6 typ.0.8 max.0.95 V Channel Leakage Current,TA=25°C; VP=5V, VN=0V,VIN = 0V to 5V typ.± 0.1 max.± 1.0 µA Channel Input Capacitance,1 MHz, VP=3.3V, VN=0V,VIN=1.65V; Note 2 typ.0.8 max. 1.20 pF Channel Input Capacitance Matching,1 MHz, VP=3.3V, VN=0V,VIN=1.65V; Note 2 typ. 0.02 pF Mutual Capacitance between signal pin and adjacent signal pin typ.0.15 pF In-system ESD Protection Peak Discharge Voltage at any channel input, in system a) Contact discharge per IEC 61000-4-2 standard,Notes 2, 4 & 5 b) Human Body Model, MILSTD-883, Method 3015,Notes 2, 3 & 5 min.±8 min±15 V V Channel Clamp Voltage Positive Transients Negative Transients typ.+9.8 typ.-1.8 V V Dynamic Resistance,IPP = 1A, tP = 8/20µS,Any I/O pin to Ground; Note 2 and 5 Positive Transients Negative Transients typ.0.76 typ.0.56 V V Note 1: T A =25°C unless otherwise specified Note 2:These parameters guaranteed by design and characterization. Note 3: Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5KO, VP = 3.3V, VN grounded. Note 4: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330O, VP = 3.3V, VN grounded. Note 5: These measurements performed with no external capacitor on VP. Note 6: Measured under pulsed conditions, pulse width = 0.7ms, maximum current = 1.5A.



SEMICONWELL Integrated Passive Networks		LOW CAPACITANCE ESD PROTECTION ARRAY SWDL1230-08

FEATURES

APPLICATIONS

SCHEMATIC

8 channels of ESD protection

Provides ESD protection to IEC61000-4-2 Level 4 ±8kV contact discharge;±15kV air discharge

Low loading capacitance of 0.8pF typical.

Minimal capacitance change with temperature and voltage

Channel I/O to GND capacitance difference of 0.02pF typical is ideal for differential signals

Channel I/O to I/O capacitance 0.15pF typical

LCD and Camera data lines in wireless handsets
that use high-speed serial interfaces.

I/O port protection for mobile handsets, notebook
computers, DSCs, MP3 players, PDAs, etc. including USB, 1394 and Serial ATA

Wireless handsets

LCD and camera modules

Handheld PCs/PDAs

SHORT PRODUCT APPLICATION NOTE

SWDL1230 series are ideal for protecting systems with high data and clock rates or for circuits that require low capacitive loading. Each channel consists of a pair of ESD diodes that act as clamp diodes that steer positive or negative ESD current pulses to either the positive or negative supply rail. A zener diode is integrated into the array between the positive and negative supply rails. The VCC rail is thus protected from ESD strikes and eliminates the need for a bypass capacitor to absorb positive ESD strikes to ground. Each channel of the SWDL1230 can safely dissipate ESD strikes of ±8kV, meeting the Level 4 requirement of the IEC61000-4-2 international standard for contact discharges as well as ±15kV air discharges per the IEC61000-4-2 specification. Using the MIL-STD-883 (Method 3015) specification for Human Body Model (HBM) ESD, the pins are protected for contact discharges at greater than ±15kV.This device is particularly well-suited for next generation wireless handsets that implement high-speed serial interface solutions for the LCD display and camera interfaces. In these wireless handset designs, a tolerance above 1.5pF cannot be tolerated due to the high data rates that are transferred between the baseband chipset and the LCD driver/controller ICs because a higher capacitive loading will cause the rise and fall times to slow which in turn hampers the functionality of circuit and operation of the wireless handset.l

SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION

Integrated passive networks are manufactured using advanced thin film technologies including ultra -stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. Semiconwell employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10,000 W/sq. All Semiconwell's products are available in die form and as KGD, known good die and are ideal for high reliability hybrid and multi chip module applications. Besides thin film resistors, Semiconwell integrates capacitors, Schottky diodes, Zener diodes and transistors. Integrated passive and active networks are manufactured using Semiconwell's in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form, these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space and weight are a concern.

ABSOLUTE MAXIMUM RATINGS
Operating Supply Voltage (VP - VN) ,V	Operating Temperature Range,°C	Storage Temperature Range,°C	DC Voltage at any channel input,V
6	-40 to +85	-65 to +150	(VN - 0.5) to (VP + 0.5)

Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

ELECTRICAL CHARACTERISTICS
PARAMETER	VALUE	UNITS
Operating Supply Voltage (VP-VN)	typ.3.3 max.5.5	V
Operating Supply Current,(VP-VN)=3.3V	max.8	µA
Diode Forward Voltage,IF = 8mA; TA=25°C	min.0.6 typ.0.8 max.0.95	V
Channel Leakage Current,TA=25°C; VP=5V, VN=0V,VIN = 0V to 5V	typ.± 0.1 max.± 1.0	µA
Channel Input Capacitance,1 MHz, VP=3.3V, VN=0V,VIN=1.65V; Note 2	typ.0.8 max. 1.20	pF
Channel Input Capacitance Matching,1 MHz, VP=3.3V, VN=0V,VIN=1.65V; Note 2	typ. 0.02	pF
Mutual Capacitance between signal pin and adjacent signal pin	typ.0.15	pF
In-system ESD Protection Peak Discharge Voltage at any channel input, in system a) Contact discharge per IEC 61000-4-2 standard,Notes 2, 4 & 5 b) Human Body Model, MILSTD-883, Method 3015,Notes 2, 3 & 5	min.±8 min±15	V V
Channel Clamp Voltage Positive Transients Negative Transients	typ.+9.8 typ.-1.8	V V
Dynamic Resistance,IPP = 1A, tP = 8/20µS,Any I/O pin to Ground; Note 2 and 5 Positive Transients Negative Transients	typ.0.76 typ.0.56	V V
Note 1: T A =25°C unless otherwise specified Note 2:These parameters guaranteed by design and characterization. Note 3: Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5KO, VP = 3.3V, VN grounded. Note 4: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330O, VP = 3.3V, VN grounded. Note 5: These measurements performed with no external capacitor on VP. Note 6: Measured under pulsed conditions, pulse width = 0.7ms, maximum current = 1.5A.

GENERAL DIE INFORMATION
Substrate	Thickness (mils)	Die size (mils)	Bonding pads	Backside metal
SiO₂ / Silicon	25±2	43 x 82 ±3	4x4 mils, 3mm thick, 99.99% electroplated gold with a TiW barrier	Au/Si compatible with eutectic and conductive epoxy die attach.
All Semiconwell products are available in die form for chip and wire hybrid circuits and multi chip modules applications. Typical delivery for standard die products is 4-6 weeks ARO. For Chip Scale Packaged (CSP) devices consult factory for an update on availability of certain products.

DIODES	BONDING PADS	CAPACITORS
The protection diodes use solid state silicon avalanche technology and are characterized by their high surge capability, low operating and clamping voltages, fast response time and low leakage current	Ultra stable TaN with low TCR <75ppm/°C typical. For Rsq<10W/sq and Rsq>500W/sq, resistive material is proprietary. Power rating/resistor max 100mW for R<1KW and 25mW for R>1KW. Standard tolerance is ±5%.	Silicon nitride dielectric, MNOS capacitors exhibit high stability, low temperature coefficients, low leakage <10nA and high BV>50V.

DIE / PACKAGE LAYOUT	PACKAGE PIN OUT

I/O pins A1,B1,A2,B2,A4,B4,A5,B5
Vss=die backside
VP pin A3
GND pin B3

STANDARD PRODUCTS ORDERING INFORMATION

SW PART#

SWDL1230-08-SO10

Delivery for packaged RCD standard products is 6-8 weeks ARO. Certain items may be available from stock. For standard products available from stock, there is a minimum line item order of $250.0. Inventory is periodically updated. For 2500pc or larger orders, all surface mount packaged devices are shipped in tape on reel (T/R). For smaller quantities, it may vary. Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. On line Orders have to be verified, accepted and acknowledged by Semiconwell sales department in writing before, becoming non cancelable binding contracts.

Semiconwell guarantees continuous supply and availability of any of it's standard products provided minimum order quantities are met.

SEMICONWELL has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONWELL for its use, nor for any infringements of rights of third parties which may result from its use. SEMICONWELL reserves the right to revise the content or modify its product line without prior notice. SEMICONWELL products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

	Semiconwell P/N	Quantity	E-mail
Receive Instant Quote