SEMICONWELL - SWPIEMI1426-04 Same as CM1426-04, 4 CHANNEL LCD AND CAMERA EMI FILTER ARRAY WITH ESD PROTECTION

SWPIEMI1426-04 Same as CM1426-04, 4 CHANNEL LCD AND CAMERA EMI FILTER ARRAY WITH ESD PROTECTION 4 CHANNEL LCD AND CAMERA EMI FILTER ARRAY WITH ESD PROTECTION SWPIEMI1426-04-CSP FEATURES APPLICATIONS SCHEMATIC Four channels of Pi-style EMI filtering, each with ESD protection Greater than 20dB attenuation over the 800MHz to 3GHz. ±8kV ESD protection (IEC 61000-4-2, contact discharge) ±15kV ESD protection on each channel (HBM) 0.5mm pitch, 10-bump, 1.96mm x 1.33mm footprint.Chip Scale Package(CSP) . Chip Scale Package features extremely low lead inductance for optimum filter and ESDperformance LCD and Camera data lines in mobile handsets EMI filtering for data ports in cell phones, PDAs or notebook computers I/O port protection for mobile handsets, notebook computers, PDAs etc. EMI filtering for LCD and chip-to-chip data lines in mobile electronic devices that use flexible PCB interconnections SHORT PRODUCT APPLICATION NOTE SWPIEMI1426 is a low-pass filter array integrating 4,6 or 8 pi-style filters (C-R-C) that reduce EMI/RFI emissions while at the same time providing ESD protection. Each high quality filter provides more than 20dB attenuation in the 800-3000 MHz range. In addition, the SWPIEMI1426 provides a very high level of protection for sensitive electronic components that may be subject to electrostatic discharge (ESD). The input pins are designed and characterized to safely dissipate ESD strikes of 8kV, the maximum requirement of the IEC 61000-4-2 international standard. Using the MIL-STD-883 (Method 3015) specification for Human Body Model (HBM) ESD, the device provides protection for contact discharges to greater than 15kV. The SWPIEMI1426 is particularly well suited for portable electronics (e.g., cellular telephones, PDAs, notebook computers) because of its small package format and low weight.In particular, the SWPIEMI1426 is ideal for EMI filtering and protecting data and control lines for the I/O data ports, LCD display and camera interface in mobile handsets. SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION Integrated passive networks are manufactured using advanced thin film technologies including ultra -stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. Semiconwell employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10,000 W/sq. All Semiconwell's products are available in die form and as KGD, known good die and are ideal for high reliability hybrid and multi chip module applications. Besides thin film resistors, Semiconwell integrates capacitors, Schottky diodes, Zener diodes and transistors. Integrated passive and active networks are manufactured using Semiconwell's in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form, these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space and weight are a concern. ABSOLUTE MAXIMUM RATINGS Reverse voltage VR Continuous IF IFRM for tw<100ms Max Power dissipation 7V 100mA 200 mA (20%duty cycle) 100mW@70°C/channel Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. ELECTRICAL CHARACTERISTICS PARAMETER VALUE UNITS Storage Temperature Range -65 to +150 °C Operating Temperature Range -40 to +85 °C DC Power per Resistor 100 mW DC Package Power Rating 500 mW Resistance Tolerance max.±20 % Total Channel Capacitance,2.5VDC Reverse Bias, 1MHz, 30mVAC min.13.6,typ.17,max.20.4 pF Capacitance C,2.5VDC Reverse Bias, 1MHz, 30mVAC min.6.8,typ.8.5,max.10.2 pF Signal Voltage ,ILOAD = 10mA,Positive Clamp Signal Voltage,ILOAD = -10mA,Negative Clamp min.5.6 ; typ.6.8; max.9 min.-1.5;typ.-0.8;max.-0.4 V V In-system ESD Withstand Voltage,Notes 2,4 and 5 a) Human Body Model, MIL-STD-883,Method 3015 b) Contact Discharge per IEC 61000-4-2 Level 4 min.±15 min.±8 kV kV Dynamic Resistance Positive Negative typ. 2.3 typ. 0.9 W W Cut-off frequency ; R = 100W, CTOTAL = 17pF,Note 6 typ.230 MHz Diode Standoff Voltage,IDIODE = 10µA typ.6 V Diode Leakage Current (reverse bias),VDIODE = 3.3V typ.0.1,max.1 µA Note 1: TA =25°C unless otherwise specified Note 2: ESD applied to input and output pins with respect to GND, one at a time. Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. Note 4: Unused pins are left open Note 5: The parameters are guaranteed by design and characterization. Note 6: ZSOURCE=50W, ZLOAD=50W. GENERAL DIE INFORMATION Substrate Thickness (mils) Die size (mils) Bonding pads Backside metal SiO2 / Silicon 15±2 77.2 x 52.4±3 0.30 DIA. 63/37 Sn/Pb (Eutectic)or 96.8/2.6/0.6 Sn/Ag/Cu (Lead-free)SOLDER BUMPS All Semiconwell products are available in die form for chip and wire hybrid circuits and multi chip modules applications. Typical delivery for standard die products is 3-4 weeks ARO. For Chip Scale Packaged (CSP) devices consult factory for an update on availability of certain products. DIODES RESISTORS CAPACITORS The diodes offer basic ESD protection, with low forward voltage, low leakage and low power dissipation in OFF state.Diodes exhibit low junction capacitance CTand low on resistance RDON. Ultra stable TaN with low TCR <75ppm/°C typical. For Rsq<10W/sq and Rsq>500W/sq, resistive material is proprietary. Power rating/resistor max 100mW for R<1KW and 25mW for R>1KW. Standard tolerance is ±5%. Silicon nitride dielectric, MNOS capacitors exhibit high stability, low temperature coefficients, low leakage <10nA and high BV>50V.



SEMICONWELL Integrated Passive Networks		4 CHANNEL LCD AND CAMERA EMI FILTER ARRAY WITH ESD PROTECTION SWPIEMI1426-04-CSP

FEATURES

APPLICATIONS

SCHEMATIC

Four channels of Pi-style EMI filtering, each with ESD protection

Greater than 20dB attenuation over the 800MHz to 3GHz.

±8kV ESD protection (IEC 61000-4-2, contact discharge)

±15kV ESD protection on each channel (HBM)

0.5mm pitch, 10-bump, 1.96mm x 1.33mm footprint.Chip Scale Package(CSP) . Chip Scale Package features extremely low lead inductance for optimum filter and ESDperformance

LCD and Camera data lines in mobile handsets

EMI filtering for data ports in cell phones, PDAs or
notebook computers

I/O port protection for mobile handsets, notebook
computers, PDAs etc.

EMI filtering for LCD and chip-to-chip data lines in mobile electronic devices that use flexible PCB
interconnections

SHORT PRODUCT APPLICATION NOTE

SWPIEMI1426 is a low-pass filter array integrating 4,6 or 8 pi-style filters (C-R-C) that reduce EMI/RFI emissions while at the same time providing ESD protection. Each high quality filter provides more than 20dB attenuation in the 800-3000 MHz range. In addition, the SWPIEMI1426 provides a very high level of protection for sensitive electronic components that may be subject to electrostatic discharge (ESD). The input pins are designed and characterized to safely dissipate ESD strikes of 8kV, the maximum requirement of the IEC 61000-4-2 international standard. Using the MIL-STD-883 (Method 3015) specification for Human Body Model (HBM) ESD, the device provides protection for contact discharges to greater than 15kV. The SWPIEMI1426 is particularly well suited for portable electronics (e.g., cellular telephones, PDAs, notebook computers) because of its small package format and low weight.In particular, the SWPIEMI1426 is ideal for EMI filtering and protecting data and control lines for the I/O data ports, LCD display and camera interface in mobile handsets.

SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION

Integrated passive networks are manufactured using advanced thin film technologies including ultra -stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. Semiconwell employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10,000 W/sq. All Semiconwell's products are available in die form and as KGD, known good die and are ideal for high reliability hybrid and multi chip module applications. Besides thin film resistors, Semiconwell integrates capacitors, Schottky diodes, Zener diodes and transistors. Integrated passive and active networks are manufactured using Semiconwell's in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form, these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space and weight are a concern.

ABSOLUTE MAXIMUM RATINGS
Reverse voltage V_R	Continuous I_F	I_FRM for t_w<100ms	Max Power dissipation
7V	100mA	200 mA (20%duty cycle)	100mW@70°C/channel

Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

ELECTRICAL CHARACTERISTICS
PARAMETER	VALUE	UNITS
Storage Temperature Range	-65 to +150	°C
Operating Temperature Range	-40 to +85	°C
DC Power per Resistor	100	mW
DC Package Power Rating	500	mW
Resistance Tolerance	max.±20	%
Total Channel Capacitance,2.5VDC Reverse Bias, 1MHz, 30mVAC	min.13.6,typ.17,max.20.4	pF
Capacitance C,2.5VDC Reverse Bias, 1MHz, 30mVAC	min.6.8,typ.8.5,max.10.2	pF
Signal Voltage ,I_LOAD = 10mA,Positive Clamp Signal Voltage,I_LOAD = -10mA,Negative Clamp	min.5.6 ; typ.6.8; max.9 min.-1.5;typ.-0.8;max.-0.4	V V
In-system ESD Withstand Voltage,Notes 2,4 and 5 a) Human Body Model, MIL-STD-883,Method 3015 b) Contact Discharge per IEC 61000-4-2 Level 4	min.±15 min.±8	kV kV
Dynamic Resistance Positive Negative	typ. 2.3 typ. 0.9	W W
Cut-off frequency ; R = 100W, C_TOTAL = 17pF,Note 6	typ.230	MHz
Diode Standoff Voltage,I_DIODE = 10µA	typ.6	V
Diode Leakage Current (reverse bias),V_DIODE = 3.3V	typ.0.1,max.1	µA
Note 1: T_A =25°C unless otherwise specified Note 2: ESD applied to input and output pins with respect to GND, one at a time. Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. Note 4: Unused pins are left open Note 5: The parameters are guaranteed by design and characterization. Note 6: Z_SOURCE=50W, Z_LOAD=50W.

GENERAL DIE INFORMATION
Substrate	Thickness (mils)	Die size (mils)	Bonding pads	Backside metal
SiO₂ / Silicon	15±2	77.2 x 52.4±3	0.30 DIA. 63/37 Sn/Pb (Eutectic)or 96.8/2.6/0.6 Sn/Ag/Cu (Lead-free)SOLDER BUMPS	Au/Si compatible with eutectic and conductive epoxy die attach.
All Semiconwell products are available in die form for chip and wire hybrid circuits and multi chip modules applications. Typical delivery for standard die products is 3-4 weeks ARO. For Chip Scale Packaged (CSP) devices consult factory for an update on availability of certain products.

DIODES	RESISTORS	CAPACITORS
The diodes offer basic ESD protection, with low forward voltage, low leakage and low power dissipation in OFF state.Diodes exhibit low junction capacitance C_Tand low on resistance R_DON.	Ultra stable TaN with low TCR <75ppm/°C typical. For Rsq<10W/sq and Rsq>500W/sq, resistive material is proprietary. Power rating/resistor max 100mW for R<1KW and 25mW for R>1KW. Standard tolerance is ±5%.	Silicon nitride dielectric, MNOS capacitors exhibit high stability, low temperature coefficients, low leakage <10nA and high BV>50V.

DIE LAYOUT	PACKAGE PIN OUT

STANDARD PRODUCTS ORDERING INFORMATION

R(W)	CTOTAL(pF)@ 2.5V DC,1MHz	CSP-10
100	17	SWPIEMI1426-04-10CSP

SW PART #	QUANTITY	CSP-10	U/P($)	BARE DIE	U/P($)
SWPIEMI1426-04	5,000pc	-10CSP		-10BD
SWPIEMI1426-04	10,000pc	-10CSP		-10BD

For products sold as bare tested die or known good die KGD, minimum order is 5000pc. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For special die level KGD requirements, different packaging or custom configurations, contact sw_sales@semiconwell.com

Delivery for packaged RCD standard products is 6-8 weeks ARO. Certain items may be available from stock. For standard products available from stock, there is a minimum line item order of $250.0. Inventory is periodically updated. For 2500pc or larger orders, all surface mount packaged devices are shipped in tape on reel (T/R). For smaller quantities, it may vary. Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. On line Orders have to be verified, accepted and acknowledged by Semiconwell sales department in writing before, becoming non cancelable binding contracts.

Semiconwell guarantees continuous supply and availability of any of it's standard products provided minimum order quantities are met.

SEMICONWELL has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONWELL for its use, nor for any infringements of rights of third parties which may result from its use. SEMICONWELL reserves the right to revise the content or modify its product line without prior notice. SEMICONWELL products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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