PAC DN2416C, PACDN2416C, same as SW TVS18KV-17, SWTVS18KV-17 18kV 17 CHANNEL ESD Transient Voltage Suppressor TVS ARRAY manufactured by SEMICONWELL ESD Transient Voltage Suppressor Array SW TVS-18KV-17 FEATURES APPLICATIONS 17 transient voltage suppressors in a single package ESD protection of I/O port connections, such as cellular phone, PDA, internet appliance and PC ports 8,13 - VDD 3,18 - VSS In-system ESD protection to 18kV contact discharge per IEC 61000-4-2 International Standard. Protection of interface ports or IC pins which are exposed to high levels of ESD discharge. Compact QSOP package saves board space and eases layout in space critical applications ESD protection of analog, video and audio R, L, V (right, left, video) ports. SHORT PRODUCT APPLICATION NOTE Semiconwell' SWTVS -18KV is a transient voltage suppressor array that provides a very high level of protection for sensitive integrated circuit terminals that may be subjected to electrostatic discharge (ESD). The back-to-back zener connections provide ESD protection in cases where nodes with AC signals are present.The SWTVS-18KV is designed and characterized to safely dissipate ESD strikes al levels well beyond the maximum requirements set forth in the IEC61000-4-2 specification (Level 4,8KV contact discharge). All pins of the SWTVS-18KV are rated at 18KV using the IEC6100-4-2 contact discharge method.Using the MIL-STD-883D (Method 3015) specification for Human Body Model (HBM) ESD, all pins are protected for contact discharges to greater than 30KV. SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION Integrated passive networks are manufactured using advanced thin film technologies including ultra -stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. Semiconwell employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10,000 W/sq. All Semiconwell's products are available in die form and as KGD, known good die and are ideal for high reliability hybrid and multi chip module applications. Besides thin film resistors, Semiconwell integrates capacitors, Schottky diodes, Zener diodes and transistors. Integrated passive and active networks are manufactured using Semiconwell's in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form, these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space and weight are a concern. ABSOLUTE MAXIMUM RATINGS Clamping voltage VR Continuous IF IFRM for tw<100ms Max Power dissipation 14V 100mA 200 mA (20%duty cycle) 100mW@70°C/channel ELECTRICAL CHARACTERISTICS (@ 25°C unless specified otherwise) PARAMETER VALUE UNITS Reverse Stand-off Voltage,I=10µA min±5.9 V Signal Clamp Voltage , Positive Clamp, 10 mA min 6 :typ.7.6 ;max. 9.2 V Signal Clamp Voltage , Negative Clamp, 10 mA min -9.2:typ.-7.6 ;max. -6 V In-system ESD withstand voltage (note 1) Human Body Model (MIL-STD-883D,method 3015) IEC61000-4-2, contact discharge method min ±30 min ±18 KV KV Clamping voltage during ESD discharge, Positive MIL-STD-883D (Method 3015) ,8KV , Negative typ. 14 typ. -14 V V Capacitance @ 2.5V dc, 1 MHz typ. 39 pF Operating Temperature -40 to +85 °C Storage Temperature -65 to +150 °C Note 1: ESD applied between channel pin and ground, one at a time. All other pins are open. All GND pins grounded. This parameter is guaranteed by design and characterization. GND in this document refers to the power supply voltage. ESD Transient Voltage Suppressor Array transient voltage suppressors in a single package In-system ESD protection to 18kV contact discharge per IEC 61000-4-2 International Standard. Compact SC70-6 package saves board space and eases layout in space critical applications ESD protection of I/O port connections, such as cellular phone, PDA, internet appliance and PC ports Protection of interface ports or IC pins which are exposed to high levels of ESD discharge. ESD protection of analog, video and audio R, L, V (right, left, video) ports. Semiconwell' SWTVS -18KV is a transient voltage suppressor array that provides a very high level of protection for sensitive integrated circuit terminals that may be subjected to electrostatic discharge (ESD). The back-to-back zener connections provide ESD protection in cases where nodes with AC signals are present.The SWTVS-18KV is designed and characterized to safely dissipate ESD strikes al levels well beyond the maximum requirements set forth in the IEC61000-4-2 specification (Level 4,8KV contact discharge). All pins of the SWTVS-18KV are rated at 18KV using the IEC6100-4-2 contact discharge method.Using the MIL-STD-883D (Method 3015) specification for Human Body Model (HBM) ESD, all pins are protected for contact discharges to greater than 30KV. |
SEMICONWELL
Integrated Passive Networks |
ESD Transient Voltage Suppressor Array SW TVS-18KV-17 |
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SHORT PRODUCT APPLICATION NOTE |
Semiconwell' SWTVS -18KV is a transient voltage suppressor array that provides a very high level of protection for sensitive integrated circuit terminals that may be subjected to electrostatic discharge (ESD). The back-to-back zener connections provide ESD protection in cases where nodes with AC signals are present.The SWTVS-18KV is designed and characterized to safely dissipate ESD strikes al levels well beyond the maximum requirements set forth in the IEC61000-4-2 specification (Level 4,8KV contact discharge). All pins of the SWTVS-18KV are rated at 18KV using the IEC6100-4-2 contact discharge method.Using the MIL-STD-883D (Method 3015) specification for Human Body Model (HBM) ESD, all pins are protected for contact discharges to greater than 30KV. |
SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION |
Integrated passive networks are manufactured using advanced thin film technologies including ultra -stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. Semiconwell employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10,000 W/sq. All Semiconwell's products are available in die form and as KGD, known good die and are ideal for high reliability hybrid and multi chip module applications. Besides thin film resistors, Semiconwell integrates capacitors, Schottky diodes, Zener diodes and transistors. Integrated passive and active networks are manufactured using Semiconwell's in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form, these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space and weight are a concern. |
ABSOLUTE MAXIMUM RATINGS | |||
Clamping voltage VR | Continuous IF | IFRM for tw<100ms | Max Power dissipation |
14V | 100mA | 200 mA (20%duty cycle) | 100mW@70°C/channel |
Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. |
ELECTRICAL CHARACTERISTICS (@ 25°C unless specified otherwise) | ||
PARAMETER | VALUE | UNITS |
Reverse Stand-off Voltage,I=10µA |
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Signal Clamp Voltage , Positive Clamp, 10 mA |
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Signal Clamp Voltage , Negative Clamp, 10 mA |
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In-system ESD withstand voltage (note 1) |
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Clamping voltage during ESD discharge, Positive |
typ. 14 |
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Capacitance @ 2.5V dc, 1 MHz |
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Operating Temperature |
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Storage Temperature |
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Note 1: ESD applied between channel pin and ground, one at a time. All other pins are open. All GND pins grounded. This parameter is guaranteed by design and characterization. GND in this document refers to the power supply voltage. |
GENERAL DIE INFORMATION | ||||
Substrate | Thickness (mils) | Die size (mils) | Bonding pads | Backside metal |
SiO2 / Silicon | 10±2 | 90 x 60 ±3 | 4X4 mils, 3µm thick 99.99% electroplated gold with TiW barrier that withstand 30 min at 400 °C in air without loss of adhesion. | Au/Si compatible with eutectic and conductive epoxy die atach. |
All Semiconwell products are available in die form for chip and wire hybrid circuits and multi chip modules applications. Typical delivery for standard die products is 3-4 weeks ARO. For Chip Scale Packaged (CSP) devices consult factory for an update on availability of certain products. |
DIODES | CONDUCTORS | CAPACITORS |
TVS diodes using solid state silicon avalanche technology are characterized by their high surge capability, low operating and clamping voltages, fast response time and low leakage current | The bonding pads are gold with a TiW barrier that withstands 30 min at 400°C in air without loss of adhesion. | Silicon nitride dielectric, MNOS capacitors exhibit high stability, low temperature coefficients, low leakage <10nA and high BV>50V. |
DIE LAYOUT | PACKAGE PIN OUT |
CSP |
SOP |
Vin=1,2,4,5,6,7,9,10,11,12,14,15,16,17,19,20 | |
Vss=3,18,13,18 | |
STANDARD PRODUCTS ORDERING INFORMATION |
SW PART # | QUANTITY | SOIC-20 | U/P($) | QSOP-20 | U/P($) | TQSOP-20 | U/P($) | TSSOP-20 | U/P($) | PDIP-20 | U/P($) | BARE DIE | U/P($) |
SWTVS-18kV17 | 5000pc | -20SO | -20QS | -20TQS | -20TS | -20DP | -20BD | ||||||
SWTVS-18kV17 | 10,000pc | -20SO | -20QS | -20TQS | -20TS | -20DP | -20BD | ||||||
For products sold as bare tested die or known good die KGD, minimum order is 5000pc. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For special die level KGD requirements, different packaging or custom configurations, contact sw_sales@semiconwell.com |
Delivery for packaged RCD standard products is 6-8 weeks ARO. Certain items may be available from stock. For standard products available from stock, there is a minimum line item order of $250.0. Inventory is periodically updated. For 2500pc or larger orders, all surface mount packaged devices are shipped in tape on reel (T/R). For smaller quantities, it may vary. Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. On line Orders have to be verified, accepted and acknowledged by Semiconwell sales department in writing before, becoming non cancelable binding contracts. |
Semiconwell guarantees continuous supply and availability of any of it's standard products provided minimum order quantities are met. |
SEMICONWELL has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONWELL for its use, nor for any infringements of rights of third parties which may result from its use. SEMICONWELL reserves the right to revise the content or modify its product line without prior notice. SEMICONWELL products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. |
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