PAC DN016 PACDN016 PACDN016S compatible, SWZDN016-8SO u/p=$0.58 in 10kpc;  SWZDN016 is a diode array designated to provide 6 channels of ESD protection for electronic components or subsystems. Each channel consists of a pair of diodes which steers the ESD current pulse either to the positive (Vp) or negative (Vn) supply. In addition, there is an integral Zener diode between Vp and Vn to suppress any voltage disturbance due to these ESD current pulses. The SWZDN016 will protect against ESD pulses up to 15kV Human Body Model, and 8kV contact discharge per International Standard IEC 61000-4-2. This device is particularly well-suited for portable electronics (e.g. cellular phones, PDAs, notebook computers) because of output lines and I/O ports in computers and peripheral equipment.

 
 
SEMICONWELL
Integrated Passive Networks
  6 CHANNEL ESD PROTECTION ARRAY
WITH ZENER SUPPLY CLAMP

SWZDN016
 
 

FEATURES
APPLICATIONS
SCHEMATIC
6 channels of ESD protection..
Integral Zener diode clamp to suppress supply rail transient.
15 kV air ESD protection per IEC 61000-4-2
8kV contact, 15kV air ESD protection per IEC 61000-4-2
Low loading capacitance, 3pF typ.
1Miniature 8-pin PDIP or SOIC package.
I/O port protection for cellular phones, notebook computers, PDAs, etc.
ESD protection for VGA (video) port in PC's or notebook computers.
ESD protection for sensitive electronic equipment

SHORT PRODUCT APPLICATION NOTE
The SWZDN016 is a diode array designated to provide 6 channels of ESD protection for electronic components or subsystems. Each channel consists of a pair of diodes which steers the ESD current pulse either to the positive (Vp) or negative (Vn) supply. In addition, there is an integral Zener diode between Vp and Vn to suppress any voltage disturbance due to these ESD current pulses. The SWZDN016 will protect against ESD pulses up to 15kV Human Body Model, and 8kV contact discharge per International Standard IEC 61000-4-2. This device is particularly well-suited for portable electronics (e.g. cellular phones, PDAs, notebook computers) because of output lines and I/O ports in computers and peripheral equipment..

SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION
Integrated passive networks are manufactured using advanced thin film technologies including ultra -stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. Semiconwell employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10,000 W/sq. All Semiconwell's products are available in die form and as KGD, known good die and are ideal for high reliability hybrid and multi chip module applications. Besides thin film resistors, Semiconwell integrates capacitors, Schottky diodes, Zener diodes and transistors. Integrated passive and active networks are manufactured using Semiconwell's in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form, these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space and weight are a concern.

ABSOLUTE MAXIMUM RATINGS
Diode Forward DC Current Operating Temperature Range DC Voltage at any Channel Input
20mA -20°C to 85°C VN-0.5 to VP+0.5V

Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

ELECTRICAL CHARACTERISTICS
PARAMETER VALUE UNITS
Operating Supply Voltage (VP - VN) max. 5.5 V
Supply Current @ VP - VN = 5.5V 20 µA
Diode Forward Voltage, IF = 20mA, T = 25 °C min. 65 max. 0.95 V
Zener clamp reverse breakdown voltage @ 1mA, T = 25 °C typ. 6.6 V
ESD Protection
Peak Discharge Voltage at any Channel Input, in-system (Note 2)
Human Body Model, Method 3015 (Note 3, 4)
Contact Discharger per IEC 61000-4-2 (Note 5)



±15
±8



kV
kV
Channel Clamp Voltage @ 15kV ESD HBM, T = 25 °C (Note 3, 4)
Positive transients
Negative transients


max. VP + 13.0
max. VN - 13.0


V
V
Channel Leakage Current, T = 25 °C typ. ±0.1 max. ±1.0 µA
Channel Input Capacitance (Measured @ 1 MHz) VP = 5V, VN = 0V, VINPUT = 2.5V (Note 4) typ. 3 max. 6 pF
Package Power Rating
SOIC Package
MSOP Package


max. 350
max. 200


mW
mW
     
Note 2: From I/O pins to VP or VN only. Bypass capacitor between VP and VN is not required. However, a 0.2 µF ceramic chip capacitor bypassing VP to VN is recommended if the lowest possible channel clamp voltage is desired.
Note 3: Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF . RDischarge = 1.5kW, VP = 5V, VN = GND.
Note 4: This parameter is guaranteed by design and characterization.
Note 5: Standard IEC 61000-4-2 with CDischarge = 150pF . RDischarge = 330W, VP = 5V, VN = GND.

GENERAL DIE INFORMATION
Substrate Thickness (mils) Die size (mils) Bonding pads Backside metal
Silicon 10±2 43 x 82 ±3 4x4 mils, 3mm thick, 99.99% electroplated gold with a TiW barrier Au/Si compatible with eutectic and conductive epoxy die attach.
All Semiconwell products are available in die form for chip and wire hybrid circuits and multi chip modules applications. Typical delivery for standard die products is 3-4 weeks ARO. For Chip Scale Packaged (CSP) devices consult factory for an update on availability of certain products.

DIODES RESISTORS CAPACITORS
Zener diodes offer basic ESD protection, with low forward voltage, low leakage and low capacitance. Zener diodes integrated between VPand VN clamps the maximum voltage ofVP relative to VN at the breakdown voltage of the Zener diode. Ultra stable TaN with low TCR <75ppm/C typical. For Rsq<10W/sq and Rsq>500W/sq, resistive material is proprietary. Power rating/resistor max 100mW for R<1KW and 25mW for R>1KW. Standard tolerance is ±5%. Silicon nitride dielectric, MNOS capacitors exhibit high stability, low temperature coefficients, low leakage <10nA and high BV>50V.

DIE LAYOUT PACKAGE PIN OUT
VARIES AS A FUNCTION OF PACKAGE
I/O=1,2,4,5,6,8
Vss=3
Vdd=7

STANDARD PRODUCTS ORDERING INFORMATION

SW PART # QUANTITY SOIC-8 U/P($) PDIP-8 U/P($) BARE DIE U/P($)
SWZDN016 10,000pc -8SO $0.58 -8DP $0.58 -8BD $0.43
For special packaging or custom configurations, contact sw_sales@semiconwell.com

  Semiconwell P/N Quantity E-mail    
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Delivery for packaged RCD standard products is 6-8 weeks ARO. Certain items may be available from stock. For standard products available from stock, there is a minimum line item order of $250.0. Inventory is periodically updated. For 2500pc or larger orders, all surface mount packaged devices are shipped in tape on reel (T/R). For smaller quantities, it may vary. Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. On line Orders have to be verified, accepted and acknowledged by Semiconwell sales department in writing before, becoming non cancelable binding contracts.

Semiconwell guarantees continuous supply and availability of any of it's standard products provided minimum order quantities are met.

SEMICONWELL has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONWELL for its use, nor for any infringements of rights of third parties which may result from its use. SEMICONWELL reserves the right to revise the content or modify its product line without prior notice. SEMICONWELL products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

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