ESD protected EMI Filter Network SWPI1430 SAME AS CM1430 -
FEATURES N channels of EMI filtering with integrated ESD protection Pi-style EMI filters in a capacitor-resistor-capacitor (C-R-C) network
Greater than 20dB attenuation (typical) at 1 GHz ±30kV ESD protection on each channel (HBM) ±15kV ESD protection on each channel (IEC 61000-4-2 Level 4, contact discharge)
TDFN package with 0.40mm lead pitch,,available with lead-free finishing.
APPLICATIONS LCD and camera modules LCD and Camera data lines in mobile handsets I/O port protection for mobile handsets, notebook computers, PDAs etc.
EMI filtering for data ports in cell phones, PDAs or notebook computers.
SHORT PRODUCT APPLICATION NOTE
The SW1430 is a family of pi-style EMI filter arrays with ESD protection, which integrates four filters (C-R-C) in small form factor
TDFN 0.40mm pitch packages. The SW1430 has component values of 8.5pF-100W-8.5pF per channel and a cut-off frequency of 200MHz. These
integrated thin film resistor-networks can be used in applications where the data rates are as high as 80Mbps. The parts include ESD
diodes on every pin, which providea very high level of protection for sensitive electronic components that may be subjected to electrostatic
discharge (ESD). The ESD protection diodes safely dissipate ESD strikes of ±15kV, well beyond the maximum requirement of the IEC61000-4-2
international standard. Using the MIL-STD-883 (Method 3015) specification for Human Body Model (HBM) ESD, the pins are protected for contact
discharges at greater than ±30kV. These devices are particularly well-suited for portable electronics (e.g. wireless handsets, PDAs, notebook
computers) because of their small package and easy-to-use pin assignments.These products are manu factured using advanced thin film technologies
including ultra-stable and self-passivating Tantalum Nitride resistors, gold interconnect metalization and reliable MNOS capacitors to achieve
excellent uniformity, performance and reliability. In packaged form,TDFN packages where the pitch is 0.40mm ,these products are the best solution
where space and weight are a concern. They are available with lead-free finishing.
SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION
Integrated passive networks are manufactured using advanced thin film technologies including ultra -stable and self passivating Tantalum
Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability.
Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent
performance at very high frequencies. Semiconwell employs proprietary thin film technologies for deposition of a wide range of sheet
resistance films from 1 W/sq to 10,000 W/sq. All Semiconwell's products are available in die form and as KGD, known good die and are ideal
for high reliability hybrid and multi chip module applications. Besides thin film resistors, Semiconwell integrates capacitors, Schottky
diodes, Zener diodes and transistors. Integrated passive and active networks are manufactured using Semiconwell's in house high reliability
semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction
passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and
Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form,
these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space
and weight are a concern.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature Range -65 to 150 °C
DC Power per Resistor 100 mW
Package Power Rating 500 mW
Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.
Resistance min.80, typ. 100, max.120 W
Operating Temperature Range -40 to 85 °C
Total Channel Capacitance,At 2.5VDC Reverse Bias, 1MHz, 30mVAC min. 14, typ. 17, max.21 pF
Capacitance C1, At 2.5VDC Reverse Bias, 1MHz, 30mVAC min. 7, typ. 8.5, max.11 pF
Leakeage current (@25°C),V DIODE =±3.3V typ.0.1, max 1 µA
Standoff Voltage,IDIODE =10 µA min. 5.5 V
Signal Clamp Voltage, Positive Clamp,ILOAD =10 mA Negative Clamp,ILOAD =-10 mA min.5.6, typ.6.8, max.9 min.-1.5, typ.-0.8, max.-0.4 V V
In-system ESD Withstand Voltage,Notes 2, 3 and 4 a) Human Body Model, MIL-STD-883, Method 3015 b) Contact Discharge per IEC 61000-4-2 Level 4 ±30 ±15 kV kV
Dynamic Resistance Positive Negative typ. 2.3 typ. 0.9 W W
Cut-off Frequency,ZSOURCE =50W,ZLOAD =50W,R=100W, C=30pF typ.200 MHz
Note 1: T A =25°C unless otherwise specified. Note 2: ESD applied to input and output pins with respect to GND, one at a time. Note 3: Unused pins are left open Note 4: These parameters are guaranteed by design and characterization.